VDS VGS max
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TC = 25°C)
-30 ±20
37
13
d-8.5
V V
mΩ nC A
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IRFHS9301PbF
HEXFET® Power MOSFET
D1 D2 G3
6D D 5D S 4S
D D
DG
D D S
S
2mm x 2mm PQFN
Applications
l Charge and Discharge Switch for Battery Application l System/load switch
Features and Benefits
Features Low RDSon (≤ 37mΩ) Low Thermal Resis...
