IRFHS8342PBF

VDS VGS max RDS(on) max (@VGS = 10V) Qg(typical) (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 30 ±20 16.0 4.2 d8.5 V V mΩ nC A Applications Control MOSFET for Buck Converters System/Load Switch Features and Benefits Features Low RDSon (≤ 16.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification IRFHS8342PbF T OP VIEW HEXFET® Power MOSFET D1 D2 G3 6D D 5D S 4S D D DG D D S S 2mm x 2mm PQFN results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFHS8342TRPbF IRFHS8342TR2PbF Package Type PQFN 2mm x 2mm PQFN 2mm x 2mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom)= 70°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current fPower Dissipation fPower Dissipation fLinear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range ...