2SB1462

Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216 1.6±0.15 Unit: mm s Features q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.45±0.1 0.3 0.75±0.15 Ratings –60 –50 –7 –200 –100 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS-Mini Type Package Marking symbol : A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –60 –50 –7 160 – 0.11 80 2.7 460 – 0.3 V MHz pF min typ max – 0.1 –100 Unit µA µA V V V *h FE Rank classification Rank h...