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2SB1457 Dataheets PDF



Part Number 2SB1457
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon PNP Transistor
Datasheet 2SB1457 Datasheet2SB1457 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications 2SB1457 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Colle.

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TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications 2SB1457 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC (DC) IC (Pulse) IB PC Tj Tstg −100 −100 −8 −2 −3 −0.5 900 150 −55 to 150 V V V A A A mW °C °C JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrea.


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