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FDMS6681Z P-Channel PowerTrench® MOSFET
May 2009
FDMS6681Z
P-Channel PowerTrench® MOSFET
-30 V, -49 A, 3.2 m: Features
Max rDS(on) = 3.2 m: at VGS = -10 V, ID = -21.1 A Max rDS(on) = 5.0 m: at VGS = -4.5 V, ID = -15.7 A Advanced Package and Silicon combination for low rDS(on) HBM ESD protection level of 8kV typical(note 3) MS...
