FDS6673BZ

www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features „ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A „ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 6.5kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation (Note1a) (Note1b) (Note1c) (Note1a) Ratings -30 ±25 -14.5 -75 2.5 1.2 1.0 -55 to 150 °C W Units V V A A Thermal Characteristics RθJA RθJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6673BZ Device FDS6673BZ Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Se...