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GT30J122 Dataheets PDF



Part Number GT30J122
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel IGBT
Datasheet GT30J122 DatasheetGT30J122 Datasheet (PDF)

www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage .

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www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 100 75 150 −55~150 Unit V V A W °C °C JEDEC JEITA ― ― TOSHIBA 2-16F1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 5.8 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-01 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT30J122 MARKING TOSHIBA GT30J122 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. ELECTRICAL CHARACTERISTICS (Ta = 25°C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance (IGBT) Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j−c) ⎯ Test Condition VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 50 mA, VCE = 5 V IC = 50 A, VGE = 15 V VCE = 10V, VGE = 0, f = 1 MHz Min ⎯ ⎯ 3.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 2.1 2500 0.20 0.30 0.25 0.40 ⎯ Max ±500 1.0 6.0 2.8 ⎯ ⎯ ⎯ 0.40 ⎯ 1.67 °C/W μs Unit nA mA V V pF 2 2006-11-01 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT30J122 3 2006-11-01 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT30J122 4 2006-11-01 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT30J122 Transient thermal impedance rth (t) (°C/W) 103 rth (t) – tW Ta = 25°C 102 101 100 10−1 10−2 10−3 10−5 10−4 10−3 10−2 10−1 100 101 102 Pulse width tW (s) 5 2006-11-01 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT30J122 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the.


DO3316P-335xL GT30J122 PHY4943D


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