Document
UNISONIC TECHNOLOGIES CO., LTD 6N90
6.2A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 6N90 is generally applied in high efficiency switch mode power supplies.
FEATURES
* RDS(ON) ≤ 1.75 Ω @ VGS=10V, ID=3.1A * Fast switching * 100% avalanche tested * Improved dv/dt capability
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
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1 of 9
QW-R502-492.N
6N90
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N90L-TA3-T
6N90G-TA3-T
6N90L-TF3-T
6N90G-TF3-T
6N90L-TF1-T
6N90G-TF1-T
6N90L-TF34-T
6N90G-TF34-T
6N90L-T2Q-T
6N90G-T2Q-T
6N90L-T2ST-T
6N90G-T2ST-T
6N90L-TQ2-T
6N90G-TQ2-T
6N90L-TQ2-R
6N90G-TQ2-R
6N90L-T3P-T
6N90G-T3P-T
6N90L-T47-T
6N90G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-220F4 TO-262 TO-262ST TO-263 TO-263
TO-3P TO-247
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube Tube Tube Tube Tube Tube Tube Tape Reel Tube Tube
6N90G-TA3-T
(1) Packing Type (2) Package Type (3) Green Package
(1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1
TF34: TO-220F4, T2Q: TO-262, T2ST: TO-262ST, TQ2: TO-263, T3P: TO-3P, T47: TO-247 (3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R502-492.N
6N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous (TC=25°C) Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS VGSS
ID IDM EAS dv/dt
900
V
±30
V
6.2
A
24
A
65
mJ
4.5
V/ns
TO-220/TO-262
TO-262ST/TO-263
Power Dissipation
TO-220F/TO220F1 TO-220F4
PD
140
W
36
W
TO-3P TO-247
230
W
220
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 3.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO220F1/TO-220F4
Junction to Ambient
TO-262/TO-262ST TO-263
TO-3P
TO-247
TO-220/TO-262
TO-262ST/TO-263
Junction to Case
TO-220F/TO220F1 TO-220F4
TO-3P
TO-247
SYMBOL θJA
θJC
RATINGS
62.5
40 50 0.89
3.47 0.54 0.57
UNIT
°C/W
°C/W °C/W °C/W
°C/W °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 9
QW-R502-492.N
6N90
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward Reverse
BVDSS IDSS
IGSS
ID=250µA, VGS=0V VDS=900V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance
VGS(TH) RDS(ON)
VDS=VGS, ID=250µA VGS=10V, ID=3.1A
DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS Total Gate Charge (Note 1, 2) Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time (Note 1, 2) Rise Time Turn-OFF Delay Time Fall-Time
QG QGS QGD tD(ON) tR tD(OFF)
tF
VDS=720V, VGS=10V, ID=6.0A IG=1mA (Note 1, 2)
VDD=100V, VGS=10V, ID=6.0A, RG=25Ω (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
ISM
VSD
IS=6.2A, VGS=0V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
IS=6.2A, VGS=0V,
Qrr
dIF/dt=100A/µs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
900
V
10 µA
+100 nA
-100 nA
3.0
5.0 V
1.75 Ω
1330
pF
140
pF
14
pF
50
nC
15
nC
17
nC
25
ns
22
ns
100
ns
45
ns
6.0 A
24 A
1.4 V
670
ns
5.5
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R502-492.N
6N90
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT
+
RG
VDS
L -
ISD VGS
VDD
Driver
Same Type as DUT
dv/dt controll.