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6N90 Dataheets PDF



Part Number 6N90
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 6N90 Datasheet6N90 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 6N90 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N90 is generally applied in high efficiency switch mode power supplies.  FEATURES * R.

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UNISONIC TECHNOLOGIES CO., LTD 6N90 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N90 is generally applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) ≤ 1.75 Ω @ VGS=10V, ID=3.1A * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-492.N 6N90 Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N90L-TA3-T 6N90G-TA3-T 6N90L-TF3-T 6N90G-TF3-T 6N90L-TF1-T 6N90G-TF1-T 6N90L-TF34-T 6N90G-TF34-T 6N90L-T2Q-T 6N90G-T2Q-T 6N90L-T2ST-T 6N90G-T2ST-T 6N90L-TQ2-T 6N90G-TQ2-T 6N90L-TQ2-R 6N90G-TQ2-R 6N90L-T3P-T 6N90G-T3P-T 6N90L-T47-T 6N90G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F4 TO-262 TO-262ST TO-263 TO-263 TO-3P TO-247 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel Tube Tube 6N90G-TA3-T (1) Packing Type (2) Package Type (3) Green Package (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1 TF34: TO-220F4, T2Q: TO-262, T2ST: TO-262ST, TQ2: TO-263, T3P: TO-3P, T47: TO-247 (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-492.N 6N90 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (TC=25°C) Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 900 V ±30 V 6.2 A 24 A 65 mJ 4.5 V/ns TO-220/TO-262 TO-262ST/TO-263 Power Dissipation TO-220F/TO220F1 TO-220F4 PD 140 W 36 W TO-3P TO-247 230 W 220 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 3.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 6.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER TO-220/TO-220F TO220F1/TO-220F4 Junction to Ambient TO-262/TO-262ST TO-263 TO-3P TO-247 TO-220/TO-262 TO-262ST/TO-263 Junction to Case TO-220F/TO220F1 TO-220F4 TO-3P TO-247 SYMBOL θJA θJC RATINGS 62.5 40 50 0.89 3.47 0.54 0.57 UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 9 QW-R502-492.N 6N90 Power MOSFET  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=250µA, VGS=0V VDS=900V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH) RDS(ON) VDS=VGS, ID=250µA VGS=10V, ID=3.1A DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V, VDS=25V, f=1.0MHz SWITCHING PARAMETERS Total Gate Charge (Note 1, 2) Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time (Note 1, 2) Rise Time Turn-OFF Delay Time Fall-Time QG QGS QGD tD(ON) tR tD(OFF) tF VDS=720V, VGS=10V, ID=6.0A IG=1mA (Note 1, 2) VDD=100V, VGS=10V, ID=6.0A, RG=25Ω (Note 1, 2) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage ISM VSD IS=6.2A, VGS=0V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr IS=6.2A, VGS=0V, Qrr dIF/dt=100A/µs (Note 1) Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. MIN TYP MAX UNIT 900 V 10 µA +100 nA -100 nA 3.0 5.0 V 1.75 Ω 1330 pF 140 pF 14 pF 50 nC 15 nC 17 nC 25 ns 22 ns 100 ns 45 ns 6.0 A 24 A 1.4 V 670 ns 5.5 µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 9 QW-R502-492.N 6N90  TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms Power MOSFET DUT + RG VDS L - ISD VGS VDD Driver Same Type as DUT dv/dt controll.


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