2N4003K

www.DataSheet.co.kr 2N4003K N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. Features: * Gate Pretection Diode SOURCE 2 DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE 3 1 2 Application: * Level Shifters * Level Switches * Low Side Load Switches * Portable Applications SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 ,Steady State Unless Otherwise Specified) Symbol V DS VG S Value 30 ±20 0.5 0.37 0.69 0.56 0.40 0.83 1.7 180 150 300 +150 -55~+150 1.0 260 Unit V (TA=25°C) (TA=85°C) ID PD A W A W A °C /W °C °C A °C Power Dissipation1 ,Steady State (TA=25°C) (TA=85°C) Continuous Drain Current 1 ,t<10s ID PD IDM Power Dissipation1 Pulsed Drain Current ,t<5s Maximum Junction-ambient ,Steady State1 ,t<10s1 ,Steady State2 R θJA TJ Tstg IS TL Operating Junction Temperature Range Storage Temperature Range Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case 10s) Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. Device Marking 2N4003K = TR8 WEITRON http://www.weitron.com.tw 1/6 08-Sep-09 Datasheet pdf - http://www.DataSheet4U.net/ ww...