2SB1412

Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −30 Collector-emitter voltage VCEO −20 Emitter-base voltage VEBO −6 Collector current −5 IC −10 Collector power dissipation 2SB1412 PC 1 10 Junction temperature Tj 150 Storage temperature Tstg −55 to 150 ∗1 Single pulse, Pw=10ms Unit V V V A(DC) A(Pulse) ∗1 W W(Tc=25°C) °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio Transition frequency hFE fT Output capacitance ∗ Measured using pulse current. Cob Min. −30 −20 −6 − − − 82 − − Typ. − − − − − 0.35 − 120 60 Max. − − − −0.5 −0.5 −1.0 390 − − Unit V V V µA µA V − MHz pF Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −5V IC/IB= −4A/ −0.1A VCE= −2V, IC= −0.5A ∗ ∗ VCE= −6V, IE=50mA, f=100MHz VCB= −20V, IE=0A, f=1MHz www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1...