2SK3097LS

www.DataSheet.co.kr Ordering number : EN8626 2SK3097LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3097LS Features General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 400 ±30 6.5 26 2.0 30 150 --55 to +150 120.7 6.5 Unit V V A A W W °C °C mJ A *1 VDD=50V, L=5mH, IAV=6.5A *2 L≤5mH, single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0V VDS=320V, VGS=0V VGS= ±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3.5A, VGS=15V Ratings min 400 1.0 ±100 3.0 1.8 3.6 0.68 0.87 4.0 typ max Unit V mA nA V S Ω Marking : K3097 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support...