BTS7904S

www.DataSheet.co.kr BTS7904S OptiMOS® -T PN Half Bridge Product Summary P V DS -30 13 -40 N 55 12 40 V mΩ A Features Dual p- and n-channel MOSFET Automotive AEC Q101 qualified Green package (RoHS compliant) Ultra low R DS(on) 150 °C operating temperature R DS(on),max ID PG-TO220-5-13 Type BTS7904S Package PG-TO220-5-13 Marking 7904S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions P Continuous drain current1) ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS IAS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=±20 A -40 -40 -160 350 -40 -16 / +5 96 -55 ... 150 55/150/56 Value N 40 40 160 200 40 +16 / -163) 69 mJ A V W °C A Unit 1.0 page 1 2008-07-08 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr BTS7904S Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction case SMD version, device on PCB5) P R thJC N R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage P V (BR)DSS V GS=0 V, I D=-1 mA N Gate threshold voltage P V GS(th) N Zero gate voltage drain current P I DSS V GS=0 V, I D=1 mA V DS=V GS, I D=-70 µA V DS=V GS, I D=40 µA V DS=-18 V, V GS=0 V, T j=25 °C V DS=-18 V, V GS=0 ...