P30NS15LFP

www.DataSheet.co.kr N-CHANNEL 150V - 0.085 Ω - 10A TO-220FP MESH OVERLAY™ POWER MOSFET TYPE STP30NS15LFP s s s STP30NS15LFP VDSS 150 V RDS(on) <0.1Ω ID 10 A TYPICAL RDS(on) = 0.085Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITCHING “S” CAPACITOR ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot EAS(1) dv/dt (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 150 150 ± 15 10 7 40 30 0.2 300 2.4 -55 to 175 (1) Starting T j = 25 oC, ID = 15A, VDD= 75V (2) ISD ≤35A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C mJ V/ns °C () Pulse width limited by safe operating area. July 2003 . 1/9 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.c...