2SK3549-01

www.DataSheet.co.kr 2SK3549-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] 200401 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 11.6±0.2 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 900 900 ±10 ±40 ±30 10 330 40 5 2.50 270 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *1 L=6.06mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < 150°C = < *3 IF < = BVDSS, Tch < = 150°C *4 VDS= 900V *5 VGS=-30V = -ID, -di/dt=50A/µs, Vcc < Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge G...