2SB1399

2SB1399 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 12 3 2SB1399 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C (peak) PC PC * Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID* 1 1 Ratings –120 –120 –7 –10 –15 2 30 150 –55 to +150 10 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 3.0 V V V Unit V V V µA Test Conditions I C = –0.1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 I C = –5 A, IB = 10 mA*1 I C = –10 A, IB = –100 mA*1 I C = –5 A, IB = 10 mA*1 I C = –10 A, IB = –100 mA*1 I D = 10 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse Test. hFE VCE (sat)1 VCE (sat)2 VBE (sat)1 VBE (sat)2 VD See switching characteristic curve of 2SB955(K). 2 2SB1399 Maxi...