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NUS3116MT

Part Number	NUS3116MT
Manufacturer	ON Semiconductor
Description	Main Switch Power MOSFET and Dual Charging BJT
Published	Sep 18, 2011
Detailed Description	NUS3116MT Main Switch Power MOSFET and Dual Charging BJT −12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Tra...
Datasheet	NUS3116MT PDF File

Overview

NUS3116MT Main Switch Power MOSFET and Dual Charging BJT −12 V, −6.
2 A, Single P−Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in the battery−powered portable electronics.
Features • High Performance Power MOSFET • Dual−Low Vce(sat) Transistors as Charging Power Mux • 3.
0x3.
0x0.
8 mm WDFN Package • Independent Pin−out Provides Circuit Flexibility • Low Profile (<0.
8 mm) for Easy Fit in Thin Environments • This is a Pb−Free Device Applications • Main Switch and Battery Charging Mux for Portable Electronics • Opti...

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NUS3116MT Main Switch Power MOSFET and Dual Charging BJT - ON Semiconductor

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