2SB1389

2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 4.5 kΩ (Typ) 500 Ω (Typ) 3 12 3 2SB1389 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID* 1 1 Ratings –60 –60 –7 –4 –8 2 25 150 –55 to +150 4 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –60 –60 –7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 3.0 V V V Unit V V V µA Test conditions I C = –0.1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –50 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –3 V, IC = –2 A*1 I C = –2 A, IB = –4 mA*1 I C = –4 A, IB = –40 mA*1 I C = –2 A, IB = –4 mA*1 I C = –4 A, IB = –40 mA*1 I D = 4 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD See switching characteristic curve of 2SB1101. 2 2SB1389 Maximum Collector Dissipa...