2SB1321A

Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD1992A I Features Large collector power dissipation PC (600 mW) Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −60 −50 −7 −1 −500 600 150 −55 to +150 Unit V V V A mA mW °C °C 1 2 3 0.45−0.05 2.5±0.5 2.5±0.5 +0.1 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT1 Type Package 1.2±0.1 0.65 max. 0.1 0.45+ − 0.05 2.5±0.1 (HW Type) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 VCBO VCEO VEBO hFE1 *2 hFE2 Collector to emitter saturation voltage Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 No-rank 85 to 340 VCE(sat) fT Cob Conditions VCB = −20 V, IE = 0 VCE = −20 V, IB = 0 IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VC...