2SB1319

Transistor 2SB1319 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings –30 –20 –7 –8 –5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 3 2 1 2.5 2.5 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE fT Cob *1 Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A*2 IC = –3A, IB = –0.1A*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz min typ 1.25±0.05 s Absolute Maximum Ratings (Ta=25˚C) 0.55±0.1 0.45±0.05 max –100 –1 4.1±0.2 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the pr...