2SD966

www.DataSheet4U.net Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope ■ Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 20 7 5 8 1 150 −55 to +150 Unit V V V A A W °C °C 1 2 3 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.7+0.3 –0.2 8.6±0.2 0.45+0.2 –0.1 (1.27) 2.54±0.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1 Symbol VCEO VEBO ICBO IEBO hFE1 *2 Conditions IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VEB = 7 V, IC = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A IC = 3 A, IB = 0.1 A VCB = 6 V, IE = −50 mA, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz Min 20 7 (3.2) Typ Max Unit V V µA µA  V MHz pF 0.1 0.1 180 150 1 150 50 600 hFE Collector-emitter saturation voltage *1 Transition ...