2SD0946A

www.DataSheet4U.net Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. A shunt resistor is omitted from the driver. φ 3.16±0.1 8.0+0.5 –0.1 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0946 2SD0946A 2SD0946B Collector-emitter voltage 2SD0946 (Base open) 2SD0946A 2SD0946B Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VEBO IC ICP PC Tj Tstg VCEO Symbol VCBO Rating 30 60 100 25 50 80 5 1 1.5 1.2 150 −55 to +150 V A A W °C °C B 1 2 3 0.75±0.1 1.9±0.1 Unit V 0.5±0.1 0.5±0.1 2.3±0.2 1.76±0.1 V 4.6±0.2 16.0±1.0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Internal Connection C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) 2SD0946 2SD0946A 2SD0946B Collector-emitter voltage (Base open) 2SD1263 2SD0946A 2SD0946B Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency *1 ≈ 200 Ω E Symbol VCBO Conditions ...