Ordering number:EN2516
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1295/2SD1935
Low-Frequency General-Purpose Ampli...
Ordering number:EN2516
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB1295/2SD1935
Low-Frequency General-Purpose Amplifier Applications
Applications
· AF power amplifier, medium-speed switching, smallsized motor drivers.
Features
· Large current capacity. · Low collector to emitter saturation voltage. · Very small-sized package permitting sets to be made
smaller and slimer.
Package Dimensions
unit:mm 2018A
[2SB1295/2SD1935]
( ) : 2SB1295
Specifications
C : Collector B : Base E : Emitter SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
Ratings (–)15 (–)15 (–)5 (–)0.8 (–)3 200 150
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
ICBO IEBO hFE1
VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA
135*
(–)100 (–)100
900* (600)
hFE2 VCE=(–)2V, IC=(–)800mA
80
* : The 2SB1295/2SD1935 are classified by 50mA hFE as follows : 2SB1295 135 5 270 200 6 400 300 7 600
Marking: 2SB1295 : UL/2SD1935 : CT hFE rank: 2SB1295 : 5, 6, 7/2SD1935 : 5, 6, 7, 8
Unit V V V A A
mW ˚C ˚C
Unit
nA nA
2SB1935 135 5 270 200 6 400 300 7 600 450 8 900
Any and all SANYO products described or contained herein do not have specif...