UNR31A4

www.DataSheet4U.net Transistors with built-in Resistor UNR31A4 Silicon PNP epitaxial planar transistor Unit: mm For digital circuits ■ Features Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −80 100 125 −55 to +125 Unit V V mA mW °C °C 5° 0.15 min. 0.23+0.05 –0.02 1 2 0 to 0.01 0.52±0.03 5° 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: CK Internal Connection R1 (10 kΩ) B R2 (47 kΩ) C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = −10 V, IE = 1 mA, f = 200 MHz Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −50 V, IE = 0 VCE = −50 V, IB = 0 VEB = −6 V, IC = 0 VCE = −10 V, IC = −5 mA IC = −10 mA,...