SUU50N10-18P

www.DataSheet4U.net New Product SUU50N10-18P Vishay Siliconix N-Channel 100-V (D-S), 175 °C MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0185 at VGS = 10 V ID (A)a 50 Qg (Typ.) 48 nC FEATURES TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS TO-251 Primary Side Switch Isolated DC/DC Converter D Drain Connected to Drain-Tab G D S G Top View Ordering Information: SUU50N10-18P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C Symbol VDS VGS Limit 100 ± 20 50a 39 8.2b 5.8b 100 50a 2.0b 45 101 136.4 68.2 3.0b 1.5b - 55 to 175 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 68817 S-81956-Rev. B, 25-Aug-08 www.vishay.com 1 Steady State Steady State Symbol RthJA RthJC Typical 40 0.85 Maximum 50 1.1 Unit °C/W www.DataSheet4U.net New Product SUU50N10-18P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, un...