SUD50N03-06AP

www.DataSheet4U.net SUD50N03-06AP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)a, e 90 77 rDS(on) (W) 0.0057 @ VGS = 10 V 0.0078 @ VGS = 4.5 V Qg (Typ) 30 D TrenchFETr Power MOSFET D Optimized for Low–Side Synchronous Rectifier Operation D 100% Rg Tested COMPLIANT RoHS APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N03-06AP—E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Source Drain Diode Current Continuous Source-Drain Avalanche Current Pulse Single Pulse Avalanche Energy L=0 0.1 1 mH TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25_C TA = 25_C IDM IS IAS EAS ID Symbol VDS VGS Limit 30 "20 Unit V 90a, e 75a, e 30b, c 25b, c 100 55a, e 6.7b, c 45 101 83 58 10b, c 7b, c –55 to 175 _C W mJ A THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t p 10 sec Steady State Symbol RthJA RthJC Typical 12 1.5 Maximum 15 1.8 Unit _C/W Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 50_C/W. e. Calculated based on maximum jun...