N-Channel MOSFET
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SUD50N03-06AP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30...
Description
www.DataSheet4U.net
SUD50N03-06AP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)a, e
90 77
rDS(on) (W)
0.0057 @ VGS = 10 V 0.0078 @ VGS = 4.5 V
Qg (Typ)
30
D TrenchFETr Power MOSFET D Optimized for Low–Side Synchronous Rectifier Operation D 100% Rg Tested
COMPLIANT
RoHS
APPLICATIONS
D DC/DC Converters D Synchronous Rectifiers
TO-252
D
Drain Connected to Tab G D S
G
Top View Ordering Information: SUD50N03-06AP—E3 (Lead (Pb)-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Source Drain Diode Current Continuous Source-Drain Avalanche Current Pulse Single Pulse Avalanche Energy L=0 0.1 1 mH TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25_C TA = 25_C IDM IS IAS EAS ID
Symbol
VDS VGS
Limit
30
"20
Unit
V
90a, e 75a, e 30b, c 25b, c 100 55a, e 6.7b, c 45 101 83 58 10b, c 7b, c –55 to 175 _C W mJ A
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t p 10 sec Steady State
Symbol
RthJA RthJC
Typical
12 1.5
Maximum
15 1.8
Unit
_C/W
Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 50_C/W. e. Calculated based on maximum jun...
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