Power Transistors
2SB1255
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1895
Unit: mm
15.0±0.3 11.0±0.2 5.0±0.2 3.2
s Features
q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-...
