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2SB1253

Part Number	2SB1253
Manufacturer	Panasonic Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893...
Datasheet	2SB1253 PDF File

Overview

Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 15.
0±0.
3 11.
0±0.
2 5.
0±0.
2 3.
2 s Features q q q q 16.
2±0.
5 12.
5 3.
5 Solder Dip Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.
5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –130 –110 –5 –10 –6 50 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.
7 21.
0±0.
5 15.
0±0.
2 φ3.
2±0.
1 2.
0±0.
2 2.
0±0.
1 0.
6±0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collecto...

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