SSM4513GM

www.DataSheet4U.net SSM4513M/GM N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance D1 D2 D1 D2 N-CH BV DSS R DS(ON) ID 35V 36mΩ 5.8A -35V 68mΩ -4.3A Fast switching performance SO-8 S1 G1 G2 S2 P-CH BVDSS RDS(ON) Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G1 ID D1 D2 G2 S1 S2 The SSM4513M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well-suited for most low voltage applications. This device is available with Pb-free lead finish (second-level interconnect) as SSM4513GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 5.8 4.7 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 ±20 -4.3 -3.4 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 10/12/2004 Rev.2.01 www.SiliconStandard.com 1 of 8 www.DataSheet4U.net SSM4513M/GM N-ch Electrical Characteristics @ T j=25 C (unless otherwise specified) Symbol BVDSS Parameter Drai...