DatasheetsPDF.com

HP147T

SHANTOU HUASHAN ELECTRONIC DEVICES

PNP SILICON TRANSISTOR

www.DataSheet4U.net Shantou Huashan Electronic Devices Co.,Ltd. PNP DARLINGTON TRANSISTOR HP147T █ APPLICATIONS High...


SHANTOU HUASHAN ELECTRONIC DEVICES

HP147T

File Download Download HP147T Datasheet


Description
www.DataSheet4U.net Shantou Huashan Electronic Devices Co.,Ltd. PNP DARLINGTON TRANSISTOR HP147T █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)…………………… 80W VCBO——Collector-Base Voltage………………………… -100V VCEO——Collector-Emitter Voltage……………………… -100V VEBO——Emitter-Base Voltage……………………………… -5V IC——Collector Current (DC) ……………………………… -10A IB——Base Current…………………………………………-0.5A TO-220 1―Base,B 2―Collector,C 3―Emitter, E █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current Min Typ Max Unit Test Conditions BVCEO(SUS) ICEO ICBO IEBO HFE(1) HFE(2) VCE(sat1) VCE(sat2) VBE(sat) VBE(on) tD tR tS tF -100 -2 -1 -2 1000 500 -2 -3 -3.5 -3 0.15 0.55 2.5 2.5 V mA mA mA IC=-30mA, IB=0 VCE=-50V, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-4V, IC=-5A VCE=-4V, IC=-10A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage Deiay time Rise Time Storage Time Fall Time V V V V uS uS uS uS IC=-5A, IB=-10mA IC=-10A, IB=-40mA IC=-10A, IB=-40mA VCE=-4V,IC=-10A, Vcc=-30V,Ic=-5A IB1=-20mA IB2=20mA www.DataSheet4U.net Shantou Huashan Electronic Devices Co.,Ltd. PNP DARLINGTON TRANSISTOR HP147T ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)