Power Transistor (160V, 1.5A)
2SB1275 / 2SB1236A
Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector...
Power
Transistor (160V, 1.5A)
2SB1275 / 2SB1236A
Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.
Absolute maximum ratings (Ta = 25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector 2SB1275 power dissipation 2SB1236A Junction temperature
Symbol VCBO VCEO VEBO IC
PC
Tj
Limits −160 −160
−5 −1.5 −3
1 10 1
150
Storage temperature
Tstg −55 to +150
∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit V V V
A(DC) A(Pulse)
∗1
W(Tc=25°C)
W ∗2 °C °C
Packaging specifications and hFE
Type Package
hFE Code Basic ordering unit (pieces)
2SB1275 CPT3 P TL 2500
2SB1236A ATV D TV2 2500
Dimensions (Unit : mm)
2SB1275
ROHM : CPT3 EIAJ : SC-63
1.0 0.5
(3) (2) (1)
2.3 0.65
2.3 0.9 0.75
5.5 1.5
0.5 2.3 5.1
6.5
0.9
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
2SB1236A
6.8
2.5
1.0 0.9 14.5 4.4
0.65Max.
ROHM : ATV
0.5 (1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter (2) Collector (3) Base
Electrical characteristics (Ta = 25C)
Parameter Collector-base breakdown voltage
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current
Emitter cutoff current Collector-emitter saturation voltage
DC current transfer ratio
2S...
