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2SB1227

Sanyo Semicon Device

Epitaxial Planar Silicon Transistor

Ordering number:EN2213B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1227/2SD1829 Driver Applications Ap...


Sanyo Semicon Device

2SB1227

File Download Download 2SB1227 Datasheet


Description
Ordering number:EN2213B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1227/2SD1829 Driver Applications Applications · Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-votlage regulators. Package Dimensions unit:mm 2041A [2SB1227/2SD1829] Features · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. · Micaless package facilitating mounting. ( ) : 2SB1227 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions Ratings (–)110 (–)100 (–)6 (–)5 (–)8 2.0 Unit V V V A A W W Tc=25˚C Tj Tstg 25 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=(–)80V, IE=0 VEB=(–)5V, IC=0 VCE=(–)3V, IC=(–)2.5A VCE=(–)5V, IC=(–)2.5A IC=(–)2.5A, IB=(–)5mA IC=(–)2.5A, IB=(–)5mA 1500 4000 20 0.9 (–1.0) (–)2.0 (–)1.5 MHz V V V Conditions Ratings min typ max (–)0.1 (–)3.0 Unit mA mA Any and all SANYO products described or contained herein do not have specifications that can handle applicat...




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