www.DataSheet4U.net
Power Transistors
2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification Comp...
www.DataSheet4U.net
Power
Transistors
2SB1417, 2SB1417A
Silicon
PNP epitaxial planar type
For power amplification Complementary to 2SD2137 and 2SD2137A
Unit: mm
s Features
q q q
Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150
Unit V
2.5±0.2
s Absolute Maximum Ratings
13.0±0.2 4.2±0.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C)
5.0±0.1 10.0±0.2 1.0
90°
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
emitter voltage 2SB1417A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
0.55±0.1
C1.0
1 2 3
2.5±0.2
2.5±0.2
1:Base 2:Collector 3:Emitter MT4 Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1417 2SB1417A 2SB1417 2SB1417A 2SB1417 2SB1417A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –6V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.375A VCE = –5V, IC = – 0.2A, f =...