2SB1184

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. Dimensions (Unit : mm) 2SB1184 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SB1243 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 1.0 0.9 1.5 2.5 9.5±0.5 +0.3 −0.1 0.9 5.5 Structure Epitaxial planar type PNP silicon transistor 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 ROHM : ATV 1.05 0.45±0.1 (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current Collector power 2SB1184 dissipation 2SB1243 IC PC −3 A (DC) 1W 15 W (TC=25°C) 1 W ∗1 Junction temperature Tj 1...