Medium power transistor (32V, 2A)
2SB1182 / 2SB1240
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A /...
Medium power
transistor (32V, 2A)
2SB1182 / 2SB1240
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type
PNP silicon
transistor
Dimensions (Unit : mm)
2SB1182
6.5±0.2 5.1+−00..21
C0.5
2.3+−00..21 0.5±0.1
2SB1240
6.8±0.2
2.5±0.2
4.4±0.2
1.0 0.9
5.5+−00..31 1.5±0.3 0.9 1.5
2.5 9.5±0.5
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1 1.0±0.2
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
0.65Max.
14.5±0.5
0.5±0.1 (1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage Collector-emitter voltage Emitter-base voltage
VCBO VCEO VEBO
−40 −32 −5
Collector current
−2 IC
−3
Collector power 2SB1182
dissipation
2SB1240
10 PC
1
Junction temperature
Tj 150
Storage temperature
Tstg −55 to 150
∗1 Single pulse, Pw=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Unit V V V
A(DC)
A (Pulse) ∗1
W (Tc=25°C)
W ∗2
°C °C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current
BVCBO BVCEO BVEBO
ICBO
−40 −32 −5
−
Emitter cutoff current Collector-emitter saturation voltage
IEBO VCE(sat)
− −
DC current transfer ratio
hFE 120
Transition frequency
fT −
Output capacitance
∗...