2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collec...
2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power
Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suitable for Middle Power Driver 2) Complementary
NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat)
VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA)
4) Lead Free/RoHS Compliant.
2SB1260 (SC-62)
Datasheet
CPT3
Collector
Base
Emitter
2SB1181 (SC-63)
lInner circuit
Collector
Base
Emitter
lApplications Motor driver , LED driver Power supply
lPackaging specifications
Part No.
Package
2SB1260 2SB1181
MPT3 CPT3
Package size (mm)
4540
6595
Taping code
T100 TL
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
180 12 1,000
330 16 2,500
Marking
BE B1181
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1/7
2013.07 - Rev.H
2SB1260 / 2SB1181
Data Sheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulsed
Power dissipation
2SB1260 2SB1181
Junction temperature Range of storage temperature
*1 Pw=20ms , duty=1/2 *2 Each terminal mounted on a reference land *3 Mounted on a ceramic board (40×40×0.7 mm) *4 Mounted on a substrate *5 TC=25°C
Symbol VCBO VCEO VEBO IC ICP *1
PD
Tj Tstg
Values
-80
-80
-5
-1.0
-2.0 0.5 *2 2.0 *3 1 *4 10 *5 150
-55 to +150
Unit V V V A A
W
W
°C °C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown...
