2SB1176

Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 ■ Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 (1.0) (1.0) Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 0.9±0.1 0˚ to 0.15˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −5 −10 15 1.3 150 −55 to +150 °C °C Unit V V V A A W 1 2 3 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared. ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB ...