2SB1172

Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A ■ Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 Unit: mm 0˚ to 0.15˚ 2.5±0.2 12.6±0.3 7.2±0.3 1.1±0.1 Parameter Collector-base voltage (Emitter open) 2SB1172 2SB1172A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating −60 −80 −60 −80 −5 −3 −5 15 1.3 150 −55 to +150 Unit V 1.0±0.2 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 0.9±0.1 0˚ to 0.15˚ Collector-emitter voltage 2SB1172 (Base open) 2SB1172A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V 1 2 3 V A A W °C °C 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared. Junction temperature Storage temperature ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Emitter open) 2SB1172 2SB1172A 2SB1172 2SB1172A IEBO hFE1 * Symbol 2SB1172 2SB1172A VBE ICES ICEO VCEO Conditions IC = −30 mA, IB = 0 VCE = −4 V, IC = −3 A VCE = −60 V, VBE = 0 VCE = −80 V, VBE = 0 VCE = −30 V, IB = 0 VCE = −60 ...