SCF6C60

SemiWell Semiconductor SCF6C60 Symbol 3. Gate ○ ○ Silicon Controlled Rectifiers ▼ 600 Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 6 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ ○ 2. Anode 1. Cathode TO-220F General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings Units V A A A A2 s A/㎲ W W A V V °C °C Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Half Sine Wave : TC = 100 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 3.8 6 66 21 50 5 0.5 2 5.0 A.C. 1 minute 1500 - 40 ~ 125 - 40 ~ 150 Aug, 2003. Rev. 1 1/5 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. www.DataSheet4U.net SCF6...