CY14V104LA

CY14V104LA CY14V104NA 4-Mbit (512 K × 8 / 256 K × 16) nvSRAM 4-Mbit (512 K × 8 / 256 K × 16) nvSRAM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Functional Description The Cypress CY14V104LA/CY14V104NA is a fast static RAM, with a non-volatile element in each memory cell. The memory is organized as 512 K bytes of 8 bits each or 256 K words of 16 bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control. 25 ns and 45 ns access times Internally organized as 512 K × 8 (CY14V104LA) or 256 K × 16 (CY14V104NA) Hands off automatic STORE on power-down with only a small capacitor STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down RECALL to SRAM initiated by software or power-up Infinite read, write, and recall cycles 1-million STORE cycles to QuantumTrap 20 year data retention Core VCC = 3.0 V to 3.6 V; IO VCCQ = 1.65 V to 1.95 V Industrial temperature 48-ball fine-pitch ball grid array (FBGA) package Pb-free and restriction of hazardous ...