KDV216E

SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio Low Series Resistance KDV216E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C 1 E CATHODE MARK B A GG MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 32 125 -55 125 UNIT V 2 D 1. ANODE 2. CATHODE F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10 ESC Marking Type Name V3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Current IR VR=32V C1V VR=1V, f=1MHz Capacitance Capacitance Ratio C2V C25V C28V C1V/C28V C1V/C2V C25V/C28V VR=2V, f=1MHz VR=25V, f=1MHz VR=28V, f=1MHz - Series Resistance rs VR=5V, f=470MHz Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.) (VR=1~28V) MIN. - 19.0 - 1.75 9.2 1.2 1.035 - TYP. - 15.0 2.1 10 1.045 - MAX. 10 21.0 2.15 0.7 UNIT nA pF pF pF pF - 2014. 3. 31 Revision No : 3 1/2 TOTAL CAPACITANCE CT (pF) KDV216E CT - VR 100 Ta=25 C f=1MHz 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) IR - VR 100 Ta=25 C 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) SERIES RESISTANCE rS (Ω) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 rS - VR Ta=25 C f=470MHz 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (pA) 2014. 3. 31 Revision No : 3 2/2 ...