SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING. FEATURES
High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=...
Description
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING. FEATURES
High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
2 D
KDV215
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B 1
G
K
A
H
E
J C I
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR VRM Tj Tstg RATING 30 35 (RL=10 125 -55 125 ) UNIT V V
M M
DIM A B C D E F G H I J K L M
MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + 2 +4/-2 4~6
1. ANODE 2. CATHODE
USC
Marking
Type Name
VA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Current SYMBOL IR IR C2V C25V C2V/C25V rS VR=5V, f=470MHz VR=30V VR=30V, (Ta=60 ) VR=2V, f=1MHz VR=25V, f=1MHz
)
TEST CONDITION MIN. 14.16 2.11 5.90 TYP. 6.50 0.4 MAX. 10 nA 100 16.25 pF 2.43 7.15 0.55 UNIT
Capacitance Capacitance Ratio Series Resistance
Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) 0.025 C(Min.) (VR=2~25V)
2005. 12. 7 www.DataSheet4U.net
Revision No : 0
F
L
1/2
KDV215
CT - VR
100
rs - VR
SERIES RESISTANCE rs (Ω)
f=1MHz Ta=25 C
0.8
0.6
CAPACITANCE CT (pF)
50 30
f=470MHz Ta=25 C
10 5 3
0.4
0.2
1 0 4 8 12 16 20 24
28
0 1 3 5 10 30
REVERSE VOLTAGE VR (V)
REVERSE VOLTAGE VR (V)
C (%)
C - Ta
3
f=1MHz
CAPA...
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