Silicon Diode
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Operation Current. Small Package ...
Description
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Operation Current. Small Package .
1
KDV143EL
SILICON EPITAXIAL PIN TYPE DIODE
2 E A F
J 2 B
I
H 1 D
G
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
)
SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA
C
DIM A B C D E F G
H
I
MILLIMETERS _ 0.05 0.6 + _ 0.05 0.3 + _ 0.05 0.28 + _ 0.05 0.25 + _ 0.05 0.18 + Typ 0.36 _ 0.02 0.025 + _ 0.05 0.2 +
Max 0.3 Typ 0.1
1. ANODE 2. CATHCDE
J
ELP-2
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance
)
TEST CONDITION VR =30V IF = 2mA VR =1V, f =1MHz IF =2mA, f =100MHz C =200pF, R =0 , Both forward and reverse direction 1 pulse MIN. TYP. MAX. 0.1 0.9 0.43 1.8 UNIT A V pF
SYMBOL IR VF CT rs -
ESD-Capability * * Failure cirterion : IR>100nA at VR=30V.
100
-
-
2007. 8. 10 www.DataSheet4U.net
Revision No : 2
1/2
KDV143EL
IF - VF
10-2 10-8
IR - VR
FORWARD CURRENT IF (A)
REVERSE CURRENT IR (A)
10-4 10-6 10-8 10-10 10-12 0 0.2 0.4 0.6 0.8 1.0
Ta=75 C Ta=50 C Ta=25 C
10-9 10-10 10-11 10-12 10-13 10-14 0 10 20 30 40 50
Ta=75 C Ta=50 C Ta=25 C
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
rs - IF
f=100MHz
CT - VR
TOTAL CAPACITANCE CT (pF)
1.0
f=1MHz
100.0
SERIES RESISTANCE rs (Ω)
10.0
1.0
0.1 0.1
1.0
10.0
0.1 1.0
10.0
FORWARD CURRENT IF (mA)
REVERSE VOLTAGE VR (V)
2007. 8. 10
Re...
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