KDS166F

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small package : TFSV. Low forward voltage. Fast reverse recovery time. Small total capacitance. C KDS166F SILICON EPITAXIAL PLANAR DIODE B B1 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL VRM VR IFM IO IFSM PD * Tj Tstg 1.5 RATING 85 80 300 100 2 100 150 -55 150 UNIT V H Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range * : Unit rating. Total rating=unit rating DIM A A1 B B1 C D H T MILLIMETERS _ 0.05 1.0 + _ 0.05 0.7 + _ 0.05 1.0 + _ 0.05 0.8 + 0.35 _ 0.05 0.15 + 0.38+0.02/-0.04 _ 0.05 0.1 + A1 C A D V mA mA A mW T 1. ANODE 1 2. N.C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 TFSV Marking 5 4 Lot No. SC 1 2 3 D1 D2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0V, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 A pF ns V UNIT SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr 2006. 1. 13 www.DataSheet4U.net Revision No : 0 1/2 KDS166F IF - VF FORWARD CURRENT IF (mA) REVERSE CURRENT IR (µA) 10 10 10 0 C Ta =2 Ta 5 C =-2 5 C 3 IR - VR 10 Ta=100 C Ta=75 C 2 1 1 10 10 -1 Ta = 10 10 -1 Ta=50 C -2 10 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE VF (V) REVERSE VOL...