CYU01M16ZFC

PRELIMINARY CYU01M16ZFC MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM Features Wide voltage range: 1.7V–1.95V Access Time: 70 ns Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax Ultra low standby power 16-word Page Mode Automatic power-down when deselected CMOS for optimum speed/power Deep Sleep Mode Offered in a Lead-Free 48-ball BGA Package Operating Temperature: –40°C to +85°C can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE LOW) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). Reading from the device is accomplished by taking Chip Enables (CE LOW) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte Hig...