RB080L-30

Schottky Barrier Diode RB080L-30 Applications General rectification Dimensions (Unit : mm) Features 1)Small power mold type. (PMDS) 2)High reliability 3)Low VF Structure Silicon epitaxial planer 2.6±0.2 21 ①② 1.5±0.2 0.1±0.02 　　　 0.1 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 ① ② year week factory Taping dimensions (Unit : mm) 2.0 0.05 4.0 0.1 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 Land size figure (Unit : mm) 2.0 PMDS Structure 1.55 0.05 0.3 5.3 -+00..01 9.5 0.1 5.5 0.05 1.75 0.1 12 0.2 2.9 0.1 4.0 0.1 1.55 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io 30 30 5 V V A Forward current surge peak (60Hz・1cyc) Junction temperature IFSM Tj 70 150 A C Storage temperature Tstg 40 to 150 C (*1)Alumina substrate at the time of assemble 180° Half Sine Wave, Tc=100°C MAX. Electrical characteristic...