Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423...
Transistor
2SB1030, 2SB1030A
Silicon
PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423 and 2SD1423A
Unit: mm
4.0±0.2
3.0±0.2
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
(Ta=25˚C)
Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit
marking
+0.2 0.45–0.1
0.7±0.1
15.6±0.5
Optimum for high-density mounting. Allowing supply with the radial taping.
V
1
2
3
emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V
1.27 1.27
V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
2.54±0.15
EIAJ:SC–72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB1030 2SB1030A 2SB1030 2SB1030A
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –7 85 40 – 0.35 200 6
*2
min
typ
max – 0.1 –1
2.0±0.2
Unit µA µA V
V V 340
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
– 0.6
...