SKCD61C120IHD

SKCD 61 C 120 I HD Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM Tjmax Conditions Tj = 25 °C, IR = 0.2 mA Ts = 80 °C, Tj = 150 °C 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1200 70 920 900 150 Unit V A A A °C CAL-DIODE IF = 115 A VRRM = 1200 V Size: 7,8 mm x 7,8 mm SKCD 61 C 120 I HD Electrical Characteristics Symbol i2t IR VF V(TO) rT Conditions Tj = 150 °C, 10 ms, sin 180° Tj = 25 °C, VRRM = 1200 V Tj = 125 °C, VRRM = 1200 V Tj = 25 °C, IF = 90 A Tj = 125 °C, IF = 90 A Tj = 125 °C Tj = 125 °C min. typ. max. 4050 0.20 6.00 Unit A2s mA mA V V V mΩ 1.50 1.50 0.92 6.1 1.77 1.77 Features high current density easy paralleling due to a small forward voltage spread positive temperature coefficient very soft recovery behavior small switching losses high ruggedness compatible to thick wire bonding compatible to standard solder processes Dynamic Characteristics Symbol trr trr Qrr Qrr Irrm Irrm Conditions Tj = 25 °C, 75 A, 600 V, 800 A/µs Tj = 125 °C, 75 A, 600 V, 800 A/µs Tj = 25 °C, 75 A, 600 V, 800 A/µs Tj = 125 °C, 75 A, 600 V, 800 A/µs Tj = 25 °C, 75 A, 600 V, 800 A/µs Tj = 125 °C, 75 A, 600 V, 800 A/µs min. typ. max. Unit µs ns µC 18 51 µC A A Typical Applications* freewheeling diode for IGBT particularly suitable for frequencies < 8 kHz Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. sold. on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.54 Conditions min. -40 -40 typ. max. 1...