SKCD46C120I4FR

SKCD 46 C 120 I4F R Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM Tjmax Conditions Tj = 25 °C, IR = 0.12 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1200 48 430 430 175 Unit V A A A °C CAL-DIODE IF = 75 A VRRM = 1200 V Size: 9,12 mm x 5,10 mm SKCD 46 C 120 I4F R Features max. junction 175 °C very low forward voltage drop positive temperature coefficient extreme soft recovery Electrical Characteristics Symbol i²t IR VF Conditions Tj = 150 °C, sin 180°, 10 ms Tj = 25 °C, VRRM = 1200 V Tj = 150 °C, VRRM = 1200 V Tj = 25 °C, IF = 75 A Tj = 150 °C, IF = 75 A Tj = 175 °C, IF = 75 A min. typ. max. 925 0.12 Unit A²s mA mA V V V V m V m 7.00 2.17 2.11 1.96 0.90 16.1 0.82 15.20 14.00 2.49 2.42 2.27 1.10 17.70 0.98 17.30 V(TO) rT V(TO) rT Tj = 150 °C Tj = 150 °C Tj = 175 °C Tj = 175 °C Dynamic Characteristics Symbol trr Err Irrm Typical Applications* freewheeling diode for IGBT Conditions Tj = 150 °C, 75 A, 600 V, 1500 A/µs Tj = 150 °C, 75 A, 600 V, 1500 A/µs Tj = 150 °C, 75 A, 600 V, 1500 A/µs min. typ. 0.5 4.2 58 max. Unit µs mJ A Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-c) 10 min. 5 min. Semitrans Assembly 0.66 Conditions min. -40 -40 typ. max. 175 175 250 320 Unit °C °C °C °C K/W Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Metallization Metallization Conditions Values 9,12 x 5,10 46 bondable (Al) solderable (Ag/Ni) Al, typ...