NTMD5836NL

NTMD5836NL Power MOSFET 40 V, Dual N−Channel, SOIC−8 Features Asymmetrical N Channels Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ID Max (Notes 1 and 2) 11 A G1 http://onsemi.com N−Channel 1 D1 N−Channel 2 D2 V(BR)DSS Channel 1 40 V RDS(on) Max 12 mW @ 10 V 16 mW @ 4.5 V G2 S1 S2 Channel 2 40 V 25 mW @ 10 V 30.8 mW @ 4.5 V 6.5 A 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 2. Only selected channel is been powered 1W applied on channel 1: TJ = 1 W * 85°C/W + 25°C = 110°C MARKING DIAGRAM* AND PIN ASSIGNMENT 8 1 SOIC−8 CASE 751 D1 D1 D2 D2 8 5836NL AYWW G G 1 S1 G1 S2 G2 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMD5836NLR2G Package SOIC−8 (Pb−Free) Shipping† 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D © Semiconductor Components Industries, LLC, 2011 www.DataSheet4U.net March, 2011 − Rev. 0 1 Publication Order Number: NTMD5836NL/D NTMD5836NL MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RθJA (Notes 3 and 4) Power Dissipation RθJA (Notes 3 and 4) Continuous Drain Current RθJA (Notes 3 and 4)...