2SB1016A

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm High breakdown voltage: VCEO = −100 V Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −5 V Collector current IC −5 A Base current IB −0.5 A Collector power dissipation (Tc = 25°C) PC 30 W JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter satur...